Infineon IPB011N04L: A High-Performance 40V OptiMOS Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, efficiency, power density, and reliability are paramount. Addressing these critical demands, the Infineon IPB011N04L stands out as a benchmark 40V power MOSFET engineered for superior performance in a compact footprint. As part of Infi neon's renowned OptiMOS™ family, this component is tailored for a wide array of applications, from server and telecom power supplies to high-frequency DC-DC converters and motor control systems.

A key highlight of the IPB011N04L is its exceptionally low on-state resistance (RDS(on)) of just 1.1 mΩ (max). This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. By operating cooler, systems can achieve greater reliability or be designed into smaller form factors without the need for extensive cooling apparatus.

Furthermore, this MOSFET is optimized for superior switching performance. The device features low gate charge (Qg) and low figures of merit (FOMs like RDS(on) x Qg), enabling it to switch at high frequencies with minimal switching losses. This capability is crucial for modern switch-mode power supplies (SMPS) that aim for higher power density and faster transient response. Designers can leverage this to use smaller magnetic components and filter capacitors, thereby reducing the overall system size and cost.

Housed in the space-saving Infineon’s proprietary SuperSO8 package (PG-TSON-8), the IPB011N04L offers an excellent thermal-to-RDS(on) ratio. This advanced packaging technology ensures efficient heat dissipation from the top of the package, allowing for improved thermal management and higher continuous current capability (up to 210 A) compared to devices in standard packages.

The device also incorporates robustness and reliability features inherent to the OptiMOS™ technology. It offers an high maximum junction temperature and is qualified for industrial and automotive applications, ensuring stable operation under demanding environmental conditions.

ICGOOODFIND: The Infineon IPB011N04L is a top-tier 40V power MOSFET that masterfully balances ultra-low conduction loss, fast switching capability, and excellent thermal performance in a miniaturized package. It is an ideal solution for designers pushing the boundaries of efficiency and power density in contemporary power conversion systems.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, OptiMOS™, Power Density.