Infineon DDB6U75N16W1R: High-Performance 75A, 160V Dual Diode Module

Release date:2025-10-31 Number of clicks:58

Infineon DDB6U75N16W1R: High-Performance 75A, 160V Dual Diode Module

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon DDB6U75N16W1R stands out as a premier solution, engineered to meet the rigorous demands of modern high-power applications. This dual diode module, rated for 75 amperes and 160 volts, is designed for use in inverters, motor drives, industrial power supplies, and renewable energy systems, where robust performance and durability are non-negotiable.

Key Features and Technical Excellence

At the heart of this module is Infineon’s advanced semiconductor technology, which ensures low forward voltage drop and minimal switching losses. This translates into higher efficiency and reduced heat generation, allowing systems to operate cooler and more reliably. The module integrates two diodes in a single isolated package, providing a compact yet high-power solution that simplifies circuit design and saves valuable space on the PCB.

The DDB6U75N16W1R utilizes a state-of-the-art chip technology optimized for high current handling. With a maximum average forward current of 75A per diode and a reverse voltage capability of 160V, it is well-suited for demanding environments such as three-phase bridge rectifiers and freewheeling diode applications. The module’s low thermal resistance and excellent thermal cycling capability ensure superior thermal management, which is critical for maintaining performance and longevity under continuous heavy loads.

Application Advantages

Designed for industrial-grade applications, this diode module offers exceptional reliability under extreme conditions. Its isolated baseplate allows for easy mounting to heat sinks, enhancing thermal dissipation and system integration. The high surge current capability makes it resilient against unexpected current spikes, common in motor drive and power conversion systems. Furthermore, the module’s construction ensures low stray inductance, which is vital for reducing voltage overshoot and electromagnetic interference (EMI) in high-frequency switching circuits.

Why Choose the DDB6U75N16W1R?

Engineers and designers will appreciate the module’s balance of performance and practicality. It not only delivers high efficiency and power density but also aligns with the need for reduced system complexity and lower overall costs. By integrating two high-performance diodes in one package, Infineon reduces component count, assembly time, and potential failure points, making it an ideal choice for next-generation power designs.

ICGOOODFIND

The Infineon DDB6U75N16W1R exemplifies innovation in power semiconductor packaging and performance, offering engineers a reliable, high-efficiency solution for demanding power electronic systems.

Keywords:

Dual Diode Module

High Current Rectification

Low Forward Voltage

Thermal Management

Power Inverter Applications

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