Infineon IPB025N08N3G: A 25V, 80A OptiMOS 5 Power MOSFET in a Compact PG-TDSON-8 Package

The relentless pursuit of higher efficiency, greater power density, and improved thermal performance drives innovation in power electronics. Addressing these demands head-on, Infineon Technologies introduces the IPB025N08N3G, a benchmark-setting power MOSFET that encapsulates top-tier performance within an extremely small footprint. This device is a part of the esteemed OptiMOS™ 5 25 V family, engineered to deliver exceptional efficiency and reliability for a wide range of demanding applications.

At the heart of this MOSFET's superiority is its remarkably low typical on-state resistance (R DS(on)) of just 1.0 mΩ at 10 V. This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for passive cooling solutions. This makes the IPB025N08N3G exceptionally effective in applications where every watt of power saved is critical.

The device is rated for a continuous drain current (I D) of 80 A at a case temperature (T C) of 100°C, showcasing its ability to handle high power levels. This robust current handling capability, combined with a 25 V drain-source voltage (V DS) rating, makes it an ideal candidate for secondary synchronous rectification in switched-mode power supplies (SMPS), server and telecom power systems, and high-current DC-DC converters. It is also perfectly suited for power management in high-performance computing, battery management systems (BMS), and motor drive control circuits.

A defining feature of the IPB025N08N3G is its advanced PG-TDSON-8 package. This package technology is a significant enabler for modern power design. Its compact 5mm x 6mm footprint saves invaluable PCB space, contributing to higher power density. More importantly, the package is designed for superior thermal dissipation. The exposed top side and the large drain tab on the bottom facilitate excellent heat transfer from the die to the environment, whether through a heatsink or into the PCB itself. This thermal efficiency ensures the device can operate reliably even under strenuous load conditions.

Furthermore, the OptiMOS™ 5 technology ensures outstanding switching performance, allowing for higher switching frequencies. This capability enables designers to use smaller passive components like inductors and capacitors, further reducing the overall size and cost of the power solution.

ICGOOODFIND: The Infineon IPB025N08N3G stands out as a premier solution for designers pushing the limits of power density and efficiency. Its best-in-class 1.0 mΩ R DS(on), high 80 A current capability, and superior thermal performance housed in the space-saving PG-TDSON-8 package make it an unparalleled choice for next-generation power conversion systems.

Keywords: OptiMOS 5, Low RDS(on), High Current Density, PG-TDSON-8 Package, Synchronous Rectification.