Infineon IPC100N04S51R7ATMA1 40V OptiMOS Power MOSFET for High-Efficiency Power Conversion

The demand for higher efficiency and greater power density in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, the Infineon IPC100N04S51R7ATMA1 40V OptiMOS Power MOSFET stands out as a premier solution designed for high-performance power conversion applications. This MOSFET combines low on-state resistance with superior switching characteristics, making it an ideal choice for a wide range of uses, from DC-DC converters and motor drives to battery management systems and load switches.

A key feature of this device is its exceptionally low RDS(on) of just 1.7 mΩ, which is a critical factor in minimizing conduction losses. This ultra-low resistance ensures that less energy is wasted as heat, thereby improving the overall thermal performance and efficiency of the power system. The reduction in power loss is particularly vital in high-current applications, where even marginal inefficiencies can lead to significant thermal challenges and reduced reliability.

Furthermore, the IPC100N04S51R7ATMA1 is optimized for fast switching operations. Its low gate charge (Qg) and figure of merit (FOM) contribute to reduced switching losses, allowing for higher frequency operation. This capability enables designers to shrink the size of passive components like inductors and capacitors, leading to more compact and cost-effective power supplies without sacrificing performance.

The device is also housed in an advanced, space-saving SuperSO8 package, which offers improved thermal resistance and power dissipation compared to standard packages. This robust packaging ensures reliable operation under strenuous conditions, supporting high power density designs that are essential in today’s space-constrained applications.

In addition, Infineon’s OptiMOS technology provides enhanced robustness and durability, featuring high avalanche ruggedness and a wide safe operating area (SOA). These attributes make the MOSFET suitable for demanding environments, including automotive and industrial systems, where reliability under extreme conditions is paramount.

ICGOOODFIND: The Infineon IPC100N04S51R7ATMA1 40V OptiMOS Power MOSFET sets a high standard for efficiency and performance in power conversion, offering designers a reliable and high-efficiency component that meets the needs of next-generation power systems.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), Fast Switching, Power Density