Infineon DD540N26K: A High-Performance 26 mΩ SiC Trench MOSFET for Next-Generation Power Conversion Systems

The relentless pursuit of higher efficiency, greater power density, and improved reliability in power conversion systems is driving the rapid adoption of wide-bandgap semiconductors. At the forefront of this revolution is silicon carbide (SiC), and Infineon Technologies AG is pushing the boundaries with its latest innovation: the DD540N26K, a 26 mΩ SiC trench MOSFET engineered to set new benchmarks in performance.

This device represents a significant leap forward, leveraging Infineon's proprietary .XT packaging technology and advanced SiC Trench MOSFET architecture. The combination of these technologies results in a component that is not just an incremental improvement but a transformative solution for demanding applications. The ultra-low on-resistance (RDS(on)) of just 26 mΩ is a key metric, directly translating to minimized conduction losses. This allows systems to operate with unprecedented efficiency, reducing heat generation and enabling the use of smaller, lighter cooling systems.

Beyond its low RDS(on), the DD540N26K excels in switching performance. The SiC trench technology ensures exceptionally low switching losses and high-frequency operation capability. This is crucial for modern power converters, as it allows designers to increase switching frequencies significantly. Higher frequencies, in turn, lead to the use of smaller passive components like inductors and capacitors, dramatically increasing the overall power density of the system. Designers can now create more compact and lighter products without sacrificing performance, a critical requirement for sectors like electromobility and renewable energy.

The robust design of the DD540N26K ensures high reliability under strenuous conditions. It features a high maximum junction temperature and excellent short-circuit robustness, providing a wide safety margin for industrial and automotive environments. Its low gate charge (Qg) also simplifies gate driving requirements, making it easier to integrate into existing designs while maintaining stable and efficient operation.

Target applications are as demanding as the component itself, including:

Electric Vehicle (EV) powertrains: On-board chargers (OBC), DC-DC converters, and main traction inverters.

Renewable energy: Solar inverters and energy storage systems (ESS).

Industrial infrastructure: Server power supplies (PSUs), telecom smps, and uninterruptible power supplies (UPS).

Fast charging stations: For electric vehicles, where efficiency and power density are paramount.

ICGOOODFIND: The Infineon DD540N26K is more than just a MOSFET; it is a pivotal enabler for the next generation of power electronics. By masterfully combining an ultra-low 26 mΩ on-resistance with the superior switching characteristics of SiC trench technology and enhanced thermal performance from .XT packaging, it delivers a potent combination of maximum efficiency, superior power density, and high reliability. This device empowers engineers to overcome traditional design limitations and create systems that are smaller, cooler, and more efficient than ever before.

Keywords: SiC MOSFET, High Efficiency, Power Density, Low RDS(on), Wide-Bandgap Semiconductor