HMC1197LP7FE: A 5 GHz to 1 GHz GaAs pHEMT MMIC Frequency Doubler

Release date:2025-09-04 Number of clicks:58

**HMC1197LP7FE: A 5 GHz to 1 GHz GaAs pHEMT MMIC Frequency Doubler**

**Introduction**

The **HMC1197LP7FE** represents a significant advancement in **monolithic microwave integrated circuit (MMIC)** technology, specifically designed for frequency doubling applications. This device efficiently converts an input signal from **5 GHz to 1 GHz**, making it an essential component in modern RF and microwave systems. Leveraging **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** technology, the HMC1197LP7FE offers superior performance, including high conversion gain, excellent harmonic suppression, and robust power handling capabilities. Its compact LP7 package ensures easy integration into various circuit designs, catering to the needs of telecommunications, radar, and test equipment industries.

**Key Features and Performance**

The HMC1197LP7FE excels in **frequency doubling** with minimal phase noise degradation, a critical factor for maintaining signal integrity in high-frequency applications. It typically achieves a **conversion gain of 10 dB**, ensuring that the output signal at 10 GHz is sufficiently strong without requiring additional amplification stages. The device also features **outstanding harmonic suppression**, with second harmonic suppression exceeding 25 dBc, which reduces the need for external filtering and simplifies system design. Additionally, it operates over a wide supply voltage range of +3V to +5V, consuming only 70 mA of current, making it suitable for both portable and stationary applications.

**Applications and Advantages**

This MMIC frequency doubler is ideal for **local oscillator (LO) chains** in microwave radios, satellite communications, and radar systems. Its ability to generate stable **frequency multiplication** from lower-frequency sources enhances system flexibility and reduces component count. The **GaAs pHEMT process** provides low noise figure and high linearity, ensuring reliable performance in demanding environments. The LP7 package’s small footprint (7-lead, 2.5 mm x 2.5 mm) supports high-density PCB layouts, aligning with modern miniaturization trends.

**Conclusion**

The HMC1197LP7FE stands out as a high-performance, efficient solution for frequency doubling needs in the 5 GHz to 10 GHz range. Its integration of advanced GaAs pHEMT technology with practical packaging offers engineers a reliable and versatile component for optimizing RF systems.

**ICGOODFIND**

The HMC1197LP7FE is a top-tier MMIC frequency doubler, delivering exceptional conversion gain, harmonic suppression, and design flexibility for next-generation RF applications.

**Keywords:**

Frequency Doubler, GaAs pHEMT, MMIC, Harmonic Suppression, Conversion Gain

Home
TELEPHONE CONSULTATION
Whatsapp
Semiconductor Technology