Infineon BSC146N10LS5ATMA1: High-Performance OptiMOS™ Power MOSFET for Advanced Switching Applications
In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon BSC146N10LS5ATMA1 stands out as a premier solution, engineered to meet the rigorous demands of modern high-frequency switching applications. As part of Infineon's esteemed OptiMOS™ 5 family, this N-channel power MOSFET is designed to deliver exceptional performance in a compact, robust package.
At its core, the BSC146N10LS5ATMA1 is built on advanced silicon technology, optimized for low switching losses and high efficiency. With a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 146 A at 25°C, this MOSFET is capable of handling substantial power levels. Its standout feature is the extremely low typical on-resistance (RDS(on)) of just 1.46 mΩ, which minimizes conduction losses and directly translates to higher system efficiency and reduced heat generation. This makes it an ideal choice for applications where energy conservation and thermal management are critical.
The device is housed in a SuperSO8 package, which offers an excellent power-to-size ratio. This compact footprint is crucial for space-constrained designs, such as those found in modern server farms, telecommunications infrastructure, and automotive systems. Despite its small size, the package ensures superior thermal conductivity, allowing for effective heat dissipation and sustained performance under heavy load conditions.
A key advantage of the OptiMOS™ 5 technology is its enhanced switching characteristics. The BSC146N10LS5ATMA1 exhibits low gate charge (Qg) and low reverse recovery charge (Qrr), enabling faster switching frequencies. This is particularly beneficial for applications like synchronous rectification in switched-mode power supplies (SMPS), DC-DC converters, and motor drive controllers. By operating at higher frequencies, designers can reduce the size of passive components like inductors and capacitors, leading to more compact and cost-effective end products.
Furthermore, the MOSFET boasts high robustness and durability, with a qualified avalanche energy specification and a wide operational temperature range. This ensures reliable performance even in harsh environments, making it suitable for industrial and automotive applications that demand long-term stability.
ICGOOODFIND: The Infineon BSC146N10LS5ATMA1 OptiMOS™ 5 power MOSFET is a top-tier component that sets a high standard for efficiency and power density. Its ultra-low RDS(on), excellent thermal performance, and fast switching capabilities make it an indispensable part of advanced power management systems, from data centers to electric vehicles.
Keywords: Power MOSFET, OptiMOS™ 5, Low RDS(on), High-Efficiency Switching, SuperSO8 Package.
