Infineon IKQ75N120CS6XKSA1: A High-Performance 1200V 75A TRENCHSTOP™ 7 IGBT with Anti-Parallel Diode

In the realm of power electronics, the demand for efficient, robust, and high-performance switching devices continues to grow, driven by applications such as industrial motor drives, renewable energy systems, and automotive inverters. The Infineon IKQ75N120CS6XKSA1 stands out as a premier solution, embodying the latest advancements in IGBT technology. This 1200V, 75A IGBT module, featuring an integrated anti-parallel diode, is engineered to deliver superior efficiency, reliability, and thermal performance, making it ideal for high-power applications.

At the heart of this device is Infineon’s TRENCHSTOP™ 7 technology, which represents a significant leap forward in IGBT design. This technology minimizes saturation voltage (Vce(sat)) while optimizing switching losses, resulting in exceptional energy efficiency and reduced heat generation. The low Vce(sat) of just 1.55V at 75A ensures that conduction losses are kept to a minimum, which is critical for improving overall system efficiency and reducing operational costs. Additionally, the soft switching behavior of the TRENCHSTOP™ 7 IGBT helps mitigate electromagnetic interference (EMI), simplifying filter design and enhancing system reliability.

The inclusion of an anti-parallel diode is a key feature that enhances the module’s versatility. This diode provides a freewheeling path for inductive loads, which is essential in applications like motor drives and inverters where reverse current flow must be managed efficiently. The diode’s low reverse recovery charge (Qrr) ensures minimal switching losses and reduces stress on the IGBT during turn-on, contributing to higher system reliability and longevity.

Thermal management is another area where the IKQ75N120CS6XKSA1 excels. The module is designed for low thermal resistance and is compatible with standard mounting techniques, facilitating efficient heat dissipation. This is crucial for maintaining performance in high-temperature environments and ensuring the device operates within its safe operating area (SOA). The high short-circuit robustness (1.5µs) further underscores its reliability, providing protection under fault conditions and enhancing system safety.

The module’s 600V/µs high dv/dt capability ensures stable switching performance even under demanding conditions, reducing the risk of false triggering and improving noise immunity. This makes it suitable for high-frequency switching applications, where precision and stability are paramount.

ICGOOFind: The Infineon IKQ75N120CS6XKSA1 is a state-of-the-art IGBT module that sets a new standard for high-power switching devices. Its combination of TRENCHSTOP™ 7 technology, integrated anti-parallel diode, and robust thermal performance makes it an excellent choice for demanding applications in industrial, renewable energy, and automotive sectors. With its emphasis on efficiency, reliability, and ease of integration, this module is poised to drive the next generation of power electronic systems.

Keywords:

TRENCHSTOP™ 7 Technology

Anti-Parallel Diode

High Efficiency

Thermal Management

Robust Switching Performance